m mbt3906lt1 sot? 23 maximum ratings rating symbol v alue unit collector?emitter voltage v ceo ? 40 vdc collector?base voltage v cbo ? 40 vdc emitter?base voltage v ebo ? 5.0 vdc collector current ? continuous i c ? 200 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board(1) p d 225 mw t a =25 c derate above 25c 1.8 mw/c ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lmbt3906lt1g = 2a electrical characteristics (t a = 2 5 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage (3) v (br)ceo vdc (i c = ?1.0 madc, i b = 0) ? 40 ? collector?base breakdown voltage v (br)cbo vdc (i c = ?10 adc, i e = 0) ? 40 ? emitter?base breakdown voltage v (br)ebo vdc (i e = ?10 adc, i c = 0) ? 5.0 ? base cutoff current i bl nadc (v ce = ?30 vdc, v eb = ?3.0 vdc) ? ? 50 collector cutoff current i cex nadc (v ce = ?30 vdc, v eb = ?3.0 vdc) ? ? 50 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. general purpose transistors pnp silicon 2 emitter 3 collector 1 base 3. pulse width < 300 s; duty cycle < 2.0%. ? device marking shipping m mbt3906lt1 2a 3000/tape & reel ordering information rohs product for packing code suffix "g", weight : 0.008g halogen free product for packing code suffix "h" . ?
m mbt3906lt1 electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (2) dc current gain h fe ?? (i c = ?0.1 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?1.0 madc, v ce = ?1.0 vdc) 80 ?? (i c = ?10 madc, v ce = ?1.0 vdc) 100 300 (i c = ?50 madc, v ce = ?1.0 vdc) 60 ?? (i c = ?100 madc, v ce = ?1.0 vdc) 30 ?? collector?emitter saturation voltage v ce(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ?? ? 0.25 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.4 base?emitter saturation voltage v be(sat) vdc (i c = ?10 madc, i b = ?1.0 madc) ? 0.65 ? 0.85 (i c = ?50 madc, i b = ?5.0 madc) ?? ? 0.95 small?signal characteristics current?gain ? bandwidth product f t mhz (i c = ?10 madc, v ce = ?20 vdc, f = 100 mhz) 250 ?? output capacitance c obo pf (v cb = ?5.0 vdc, i e = 0, f = 1.0 mhz) ?? 4.5 input capacitance c ibo pf (v eb = ?0.5 vdc, i c = 0, f = 1.0 mhz) ?? 10 input impedance h ie k ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 2.0 12 voltage feedback ratio h re x 10 ?4 (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 0.1 10 small?signal current gain h fe ? (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 100 400 output admittance * h oe mhos (v ce = ?10 vdc, i c = ?1.0 madc, f = 1.0 khz) 3.0 60 noise figure nf db (v ce = ?5.0vdc, i c = ?100 adc, r s =1.0 k ? , f =1.0khz) ?? 4.0 switching characteristics delay time (v cc = ? 3.0 vdc, v be = 0.5 vdc, t d ?35 rise time i c = ?10 madc, i b1 = ?1.0 madc) t d ?35ns storage time (v cc = ?3.0 vdc, i c = ?10 madc, t s ? 225 ns fall time i b1 = i b2 = ?1.0 madc) t f ?75 3. pulse test: pulse width < 300 s; duty cycle < 2.0%.
figure 1. delay and rise time equivalent test circuit *total shunt capacitance of test jig and connectors 10 k 3 v 275 c s < 4.0 pf* 10 k 3 v 275 c s < 4.0 pf* 1n916 + 0.5 v 10 < t 1 < 500 s duty cycle = 2% 10.9 v <1ns <1 ns ? 10.6 v t 1 + 9.1 v 0 figure 2. storage and fall time equivalent test circuit 300ns duty cycle = 2% typical transient characteristics i c , collector current (ma) figure 4. charge data reverse bias (volts) figure 3. capacitance v cc = 40 v i c / i b = 10 q t t j = 25c t j = 125c c obo c ibo q a 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 10.0 7.0 5.0 3.0 2.0 1.0 5000 3000 2000 1000 700 500 300 200 100 70 50 q, charge (pc) capacitance (pf) i c , collector current (ma) figure 6. fall time i c , collector current (ma) figure 5. turn?on time time (ns) t r , fall time (ns) v cc = 40 v i b1 = i b2 t r @v cc =3.0v 40 v i c /i b = 10 t d @v ob =0v 2.0 v 15 v 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 500 300 200 100 70 50 30 20 10 7 5 i c /i b = 10 i c /i b = 20 0 m mbt3906lt1
source resistance= 200 ? i c = 1.0 ma typical audio small?signal characteristics noise figure variations (v ce = ? 5.0 vdc, t a = 25c, bandwidth = 1.0 hz) f, frequency (khz) figure 7. noise figure r g , source resistance (k ? ) figure 8. noise figure nf, noise figure (db) nf, noise figure (db) f = 1.0 khz i c = 0.5 ma source resistance =1.0k ? i c = 50 a source resistance= 500 ? i c = 100 a source resistance= 200 ? i c = 0.5 ma i c = 1.0 ma i c = 100 a i c = 50 a 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 12 10 8 6 4 2 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 14 12 10 8 6 4 2 0 h re , voltage feedback ratio (x 10 ?4 ) h parameters (v ce = 10 vdc, f = 1.0 khz, t a = 25c) i c , collector current (ma) figure 9. current gain i c , collector current (ma) figure 10. output admittance i c , collector current (ma) figure 11. input impedance i c , collector current (ma) figure 12. voltage feedback ratio h fe , dc current gain h oe , output admittance ( mhos) h ie , input impedance (k ? ) 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 10 5.0 2.0 1.0 0.5 0.2 100 50 20 10 5 2 1 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 m mbt3906lt1
typical static characteristics i b , base current (ma) figure 14. collector saturation region i c , collector current (ma) figure 13. dc current gain i c , collector current (ma) figure 16. temperature coefficients c , collector current (ma) figure 15. ?on? voltages h fe , dc current gain (normalized) v ce , collector emitter voltage (volts) v, voltage ( volts ) coefficient (mv/ c) i c =1.0 ma t j = 25c +25c to +125c vc for v ce(sat) t j = +125c v ce = 1.0 v +25c ?55c 10 ma t j = 25c 30 ma 100 ma v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ v ce =1.0 v ?55c to +25c +25c to +125c ?55c to +25c vb for v be(sat) 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 1.0 0.5 0 ? 0.5 ?1.0 ?1.5 ?2.0 m mbt3906lt1
d j k l a c b s h g v 12 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 0.031 0.8 sot-23 3 m mbt3906lt1
|
